摘要
为满足电子设备连续波、小型化、高功率的要求,文中研制了一种X波段宽带功率放大器。针对高频段的单个功率器件输出功率小、效率低的问题,选取效率高的Ga N器件作为功率器件,采用功率合成方法,用微带合成器将4个功率单片进行合成,达到输出高功率的目的。最终研制出的功率放大器的工作频率为8~12 GHz,输出功率56 W,中心频点效率32%,驻波1.4。
In order to satisfy the requirement of continuous wave （CW） , miniaturization , high power, in the electronic equipment, an X band broadband power amplifier is designed. The problem of the component at the high frequence is that it has the small power and the low efficiency. Because of this, the GaN component which has the high efficiency is selected. Four power IC are combined by the microstrip combiner. Then the power amplifier offers high power. A power amplifier at the frequency 8 - 12 GHz with 50 W CW power, 32% efficiency, 1.4 standing wave is designed at last.
出处
《电子科技》
2017年第7期136-138,共3页
Electronic Science and Technology
基金
中国电子科技集团公司第十三研究所横向项目(150614)
关键词
X波段
宽带功率放大器
微带
合成
X band
broadband power amplifier
microstrip
combined
