铌酸锂低半波电压电光调制器研究

Study on Low Half-wave Voltage Electro-optic Modulator Based on Lithium Niobate

对降低铌酸锂(LN)电光调制器的半波电压进行了研究,探索了利用反射结构实现低半波电压的原理。通过退火质子交换工艺在x切LN晶片上制作了反射结构的LN电光调制器。测试表明,这种反射结构的LN电光调制器在保持器件长度不变的条件下可以降低半波电压。

This paper focuses on lowering the half-wave voltage of lithium niobate（LN）electro-optic modulator.The principle of realizing the low half-wave voltage by the reflection structure is investigated.A reflection type electro-optic modulator is proposed and fabricated with x-cut LN crystal through the annealed proton-exchanged process.Preliminary results prove that the proposed reflection type LN electro-optic modulator can lower the half-wave voltage without increasing the length of device.