面向MEMS红外光源的高辐射率纳米硅结构制备

High-Emissivity Nano-scale Silicon Structure Preparation for MEMS Infrared Source

通过制备面向MEMS红外光源的高辐射率多晶硅纳米柱状结构和单晶硅纳米孔结构,以提升红外源表面辐射率,降低器件功耗。制备方法分别为反应离子刻蚀(reactive-ion-etching,RIE)及等离子浸没离子注入(plasma immerse ion implantation,PIII)工艺对单晶硅以及铝电极掩膜的多晶硅表面调控修饰制备。并对2种纳米硅结构进行了吸收率测试,对铝电极掩膜进行了引线键合破坏拉力测试。测试表明,纳米硅结构在3~5μm波段的辐射率可以达到85%以上,暴露在刻蚀气氛后的铝电极掩膜引线键合强度可以达到器件工艺要求。

High emissivity nano-scale silicon nano-column structure and nano-pore structure used for MEMS infrared source were prepared to improve the surface emissivity and reduce the total power consumption.The preparation methods were react-ionetching （RIE） and plasma immerse ion implantation （PIII） techniques which were modified regulation preparation by single crystal silicon and poly silicon beneath the aluminum mask.Two kinds of nanometer silicon structure was absorption rate tested.A- luminum electrode mask for the wire bonding was tensile tested.Results show that radiation rate of nano-scale silicon structure can reach higher than 85% at 3-5 μm.Aluminum electrode mask wire bonding strength under etching atmosphere can meet the requirements of device technology requirement.