SiC MOSFET在感应加热电源中的应用

Application of SiC MOSFET in induction heating power supply

目前,感应加热电源技术主要朝着大功率、高频率和智能化控制技术的方向发展。然而,随着逆变开关频率的提高,功率器件的开关损耗随之增加。具有高临界雪崩击穿电场强度、高热导率、小介电常数等突出优点的宽禁带半导体材料SiC MOSFET的应用为这一问题的解决提供了理想的方案。本文详细研究了感应加热电源逆变器的设计、SiC MOSFET器件的驱动电路以及电源的功率扩展等问题;开发出了频率超过800 kHz,单逆变桥功率超过50k W的新型感应加热电源;通过并桥处理,电源单机容量可达200 kW,在一定程度上填补了将新型SiC MOSFET器件应用于感应加热领域的空白。

At present, the induction heating power supply technology is mainly towards？ the direction of high power, high frequency and intelligent control technology. However, with the increase of the inverter switching frequency, the switching loss of power devices is increasing as well. With the outstanding advantages of high critical avalanche break- down electric field strength, high thermal conductivity, low dielectric constant, the application of SiC MOSFET, as a wide band gap semiconductor materials, provides an ideal solution for this problem. In this paper, the design of in- duction heating power supply inverter, and the corresponding drive circuits for SiC MOSFET and the power scaling are studied in detail. Finally, a new type of induction heating power supply with frequency of more than 800 kHz and sin- gle inverter bridge power over 50 kW has been developed. By the parallel connection of the inverter bridge, the power supply of the single machine capacity is up to 200 kW, which fills up the blank in the field of induction heating by the new SiC MOSFET device to a certain extent.