摘要
研制了一款Ku波段GaN单片低噪声放大器,该放大器采用了GaN 0.25μm Ku功率工艺,工作电压为10 V。在12~18 GHz频带内,噪声NF≤2.9 d B,增益G≥20 d B,输入驻波比VSWR1≤1.8,输出驻波比VSWR2≤1.5。该芯片在16 GHz下,承受38 d Bm的大功率输入脉冲(周期为1 ms,占空比为10%)10 min,经测试未发现低噪声放大器芯片烧毁的现象。
A Ku-band GaN monolithic-microwave integrated-circuit low-noise amplifier is designed and fabricated using GaN 0.25 μm technology. The amplifier working at 10 V with a current 160 m A has a noise figure below 2.9 d B,a gain over 20 d B and input/output VSWR less than 1.8/1.5 from 12 GHz to 18 GHz. The amplifier can endure 38 d Bm of input pulse power（1 ms period and 10% duty ratio at 16 GHz） for 10 minutes.
出处
《电子与封装》
2017年第6期27-30,35,共5页
Electronics & Packaging
