高温化学气相沉积法制备致密碳化钽涂层

Preparation of high-density tantalum carbide coating by high-temperature chemical vapor deposition

采用高温化学气相沉积法(CVD)在高纯高密石墨基片的表面沉积了碳化钽(TaC)涂层。通过研究气化温度、气体流量及沉积温度对TaC涂层表面质量的影响,确定了高温CVD法制备TaC涂层的工艺参数,最终获得高致密度的TaC涂层。

Tantalum carbide（TaC）coating was prepared on high-purity,high-density graphite by high-temperature chemical vapor deposition（CVD）.The effects of gasification temperatures,flow rates and deposition temperatures on the surface qualities of TaC coating were investigated.And then,the technical conditions of TaC coating prepared by CVD method were confirmed.Finally,TaC coatings with high densities were obtained.