摘要
介绍了带本征薄层硅异质结HIT太阳能电池的研究与产业化进程。阐述了提高硅异质结HIT太阳能电池光电转换效率的关键技术,如单晶硅片表面的织构化技术、异质结界面的钝化技术、栅电极制备技术和双面电池技术。最后,介绍了基于量子限域效应的硅量子点异质结HIT太阳能电池的设计理论及研究进展。
Areviewon the research and the industrialization of silicon-based HIT solar cells with intrinsic thin layer is presented. The key technologies about improving the conversion eficiencies of siticon-based HIT solar cell are in-troduced , such as the texturization of silicon wafer surface, the pasivation of heterojunction interface, the grid e-lectrode fabrication, and the bifacial processes. Research achievements on the theoretical design and the experi-mental efforts about tlie silicon quantum dots HIT solar cells, which are based on quantum confiexplained in the last part.
出处
《武汉轻工大学学报》
2017年第2期1-7,共7页
Journal of Wuhan Polytechnic University
基金
湖北省教育厅科技计划项目资助(B2016074)
关键词
硅异质结
本征层
钝化
转换效率
太阳能电池
silicon HIT
intrinsic thin layer
pasivation
conversion eficiency
solar cell