9～15 GHz GaAs E-PHEMT高性能线性功率放大器

9-15 GHz GaAs E-PHEMT High Performance Linear Power Amplifier

基于0.15μm GaAs增强型赝配高电子迁移率晶体管(E-PHEMT)工艺,研制了一款用于5G通信和点对点传输的高性能线性功率放大器单片微波集成电路(MMIC)。采用栅宽比为1∶4.4的两级放大结构保证了电路的增益和功率指标满足要求;基于大信号模型实现了最优输入输出阻抗匹配;采用电磁场仿真技术优化设计的MMIC芯片尺寸为2.5 mm×1.1 mm。芯片的在片测试结果表明,静态直流工作点为最大饱和电流的35%、漏压为5 V的条件下,在9~15 GHz频率内,MMIC功率放大器小信号增益大于20 dB,1 dB压缩点输出功率不小于27 dBm,功率附加效率不小于35%,功率回退至19 dBm时三阶交调不大于-37 dBc。

Based on the 0. 15 μm Ga As enhancement-mode pseudomorphic high electron mobility transistor（ E-PHEMT） process,a high performance linear power amplifier monolithic microwave integrated circuit（ MMIC） used for 5G communication and point-to-point transmission was designed and fabricated. The two-stage amplification structure with a gate width ratio of 1 ∶ 4. 4 ensured the gain and power of the circuit. The optimal match of the input and output impedance was achieved based on the large-signal model. With the electromagnetic field simulation technology design,the chip size was optimized to 2. 5 mm×1. 1 mm. The on-wafer test results of the chip show that when the static DC operating point is 35% of the maximum saturation current,the drain voltage is 5 V,and at the frequency of 9-15 GHz,the small-signal gain of the MMIC power amplifier is greater than 20 dB,the output power at the 1 dB compression point is greater than or equal to 27 dBm,and the power additional efficiency is greater than or equal to 35%. When the power is back to 19 dBm,the third order intermodulation is less than or equal to-37 dBc.