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Parasitic lasing in large aperture Ti:sapphire chirped pulse amplifier

Parasitic lasing in large aperture Ti:sapphire chirped pulse amplifier
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摘要 We research some properties of parasitic lasing(PL) in the Ti:sapphire chirped pulse amplifier with the crystal diameter of 100 mm. The evolutionary process from the spontaneous emission to the PL and its influence on amplified output energy, spectrum, and beam profile are experimentally measured. The threshold of PL in the crystal is 22 J, and the output signal can still keep rising with the pump when the pump energy is below 38 J. The PL has no obvious impact on the output spectrum and beam profile besides the energy. We research some properties of parasitic lasing(PL) in the Ti:sapphire chirped pulse amplifier with the crystal diameter of 100 mm. The evolutionary process from the spontaneous emission to the PL and its influence on amplified output energy, spectrum, and beam profile are experimentally measured. The threshold of PL in the crystal is 22 J, and the output signal can still keep rising with the pump when the pump energy is below 38 J. The PL has no obvious impact on the output spectrum and beam profile besides the energy.
出处 《Chinese Optics Letters》 SCIE EI CAS CSCD 2017年第6期50-53,共4页 中国光学快报(英文版)
基金 supported by the National Natural Science Foundation of China(NSFC)under Grant Nos.61378030 and 61521093
关键词 sapphire amplifier lasing aperture evolutionary parasitic spontaneous repetition cladding FWHM sapphire amplifier lasing aperture evolutionary parasitic spontaneous repetition cladding FWHM

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