摘要
AlGaN epitaxial layer has been studied by means of temperature-dependent time-integrated photoluminescence（PL）and time-resolved photoluminescence（TRPL）. An enhancing redshift phenomenon in TRPL spectra with increasing temperature was observed, and the localized excitons behaved like quasi two-dimensional excitons between 6 K and 90 K. We demonstrated that these behaviors are caused by a change in the carrier dynamics with increasing temperature due to the competition of carriers＇ localization and delocalization in the AlGaN alloy.
AlGaN epitaxial layer has been studied by means of temperature-dependent time-integrated photoluminescence（PL）and time-resolved photoluminescence（TRPL）. An enhancing redshift phenomenon in TRPL spectra with increasing temperature was observed, and the localized excitons behaved like quasi two-dimensional excitons between 6 K and 90 K. We demonstrated that these behaviors are caused by a change in the carrier dynamics with increasing temperature due to the competition of carriers＇ localization and delocalization in the AlGaN alloy.
基金
Project supported by the National Key Research and Development Program of China(Grant No.2016YFB0400101)
Beijing Science and Technology Project,China(Grant No.Z151100003315024)
