摘要
We fabricate different-sized Al/AlO_x/Al Josephson junctions by using a simple bridge-free technique, in which only single-layer E-beam resist polymethyl methacrylate（PMMA） is exposed at low accelerate voltage（below 30 kV） and the size of junction can be varied in a large range. Compared with the bridge technique, this fabrication process is very robust because it can avoid collapsing the bridge during fabrication. This makes the bridge-free technique more popular to meet different requirements for Josephson junction devices especially for superconducting quantum bits.
We fabricate different-sized Al/AlO_x/Al Josephson junctions by using a simple bridge-free technique, in which only single-layer E-beam resist polymethyl methacrylate（PMMA） is exposed at low accelerate voltage（below 30 kV） and the size of junction can be varied in a large range. Compared with the bridge technique, this fabrication process is very robust because it can avoid collapsing the bridge during fabrication. This makes the bridge-free technique more popular to meet different requirements for Josephson junction devices especially for superconducting quantum bits.
基金
Project supported by the National Key Research and Development Program of China(Grant No.2016YFA0301802)
the National Natural Science Foundation of China(Grant Nos.11474152,91321310,11274156,11504165,and 61521001)
