液相外延原位Au掺杂碲镉汞薄膜材料的研究

Reasearch on Au-doped HgCdTe epilayer growth by LPE

通过液相外延方法,在碲锌镉衬底上制备了原位Au掺杂碲镉汞薄膜材料,采用金相显微镜、X光双晶衍射仪、二次离子质谱仪、Hall测试、少子寿命测试等手段对Au掺杂的碲镉汞薄膜材料进行了表征,外延片的表面形貌、晶格质量等和常规的碲镉汞外延材料基本相当,少子寿命较常规材料提高至少一个量级,芯片R_0A提高至少5倍,并成功制备出了截止波长为10μm的256×256探测器芯片,响应率非均匀性为2.85%,有效像元率为99.2%。

The Au-doped HgCdTe epilayer on CdZnTe substrates was grown by LPE. The Au-doped ttgCdTe epilayer was characterized with some measurement methods, such as metallurgical microscope, X-ray diffraction, SIMS, Hall and minority carrier lifetime,and so on. The measuring results show that HgCdTe epilayer has good surface topography and lattice quality,and minority carrier lifetime is approximately 10 times as that of conventional HgCdTe films, and RoA increases by 5 times. Based on this material,256 x 256 LWIR FPAs with λe of 10 μm at 77 K have been grown, and its non uniformity of response is 2. 85% ,and effeetive pixel is 99. 2%.