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漏电流对CMOS探测器成像品质的影响分析

The Influence of the Leakage Current to CMOS Image Quality
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摘要 CMOS探测器近年来在工业、民用、航天等领域得到了广泛的应用,而漏电流对CMOS探测器成像品质影响的研究却较少。文章针对CMOS探测器在低读出速率时造成图像噪声过大的原因进行了分析,发现CMOS探测器的漏电流是产生该种图像噪声主要成因,并对不同读出速率下的像质进行了试验分析。理论和试验结果表明:在较低的读出速率时,CMOS探测器的漏电流产生的噪声过大,导致图像噪声的增大,影响了像质。因此,设计CMOS相机时应重点考虑低读出速率时,CMOS探测器漏电流对像质的影响,必要时要增加缓存,以便获得更好的像质。文章将为CMOS探测器在低速读出应用、设计提供一定的参考。 CMOS image sensor is widely used in industrial, civil, aerospace and other fields in recent years. However, the influence of the leakage current to the CMOS image quality is less studied. According to the mechanism analysis of the CMOS sensor, it is found that the leakage current of the CMOS image sensor is the main reason of the image noise. The leakage current mechanism of CMOS image sensor is analyzed and image quality is analyzed under different readout rates. Theoretical and experimental results show that the image noise is increased at lower readout rates, because of the influence of the leakage current of the CMOS. And the results show that the image noise will increase at the bottom of image. Therefore, designing CMOS camera should consider the effects of low readout rate to image noise, and it is necessary to increase cache for obtaining better image quality. The study of this paper will provide strong guidance for CMOS design in low-speed readout applications.
作者 唐庆博 唐超 张恒浩 TANG Qingbo TANG Chao ZHANG Henghao(R&D Centre, China Academy of Launch Vehicle Technology, Beijing 100076, China)
出处 《航天返回与遥感》 CSCD 北大核心 2017年第3期53-57,共5页 Spacecraft Recovery & Remote Sensing
关键词 漏电流 图像探测器 图像噪声 读出速率 空间相机 leakage current image sensor image noise readout rate space camera
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  • 1曾德贤,赵继广.CMOS图像传感器的三种新技术[J].光机电信息,2004,21(11):24-27. 被引量:6
  • 2Sugiki T,,Ohsawa S,Miura Het al.A60 mW10 b CMOS image sensor with column-to-column FPN re- duction[].Solid-State Circuits ConferenceDi- gest ofTechnical Papers ISSCCIEEE Interna- tional.2000
  • 3Furuta M,Kawahito S,Inoue Tet al.A cyclic A/D converter with pixel noise and column-wise offset can- celing for CMOS image sensors[].Solid-State Circuits Conference ESSCIRC Proceed- ings ofthest European.2005
  • 4Ihara H,,Yamashita H,Inoue Iet al.A 3.7μm× 3.7μm square pixel CMOS image sensor for digital still camera application[].Solid-State Circuits Conference Digest ofTechnical Papersth ISSCC IEEE International.1998
  • 5Fujimori I L,,Wang Ching-Chun,Sodini C Get al.A 256×256 CMOS differential passive pixel imager with FPNreduction techniques[].IEEEJournal ofSolid- State Circuits.2000
  • 6Canaan Sungkuk Hong.On-Chip Spatial Image Pro- cessing with CMOS Active Pixel Sensors[]..2001
  • 7FossumE R.CMOS image sensors: Electronic camera on a chip[].IEEETransactions on Electron Devices.1997
  • 8Phillip E A.CMOS Analog Circuit Design[ M][]..2002
  • 9Wu Chungyu,Shih Yuchuan.Design, optimization and performance analysis of newphotodiode structures for CMOS active-pixel-sensor(APS) imager applica- tions[].IEEE Sensors Journal.2004
  • 10程开富.CMOS图像传感器的发展现状及关键技求探讨[J].光机电信息,2001,18(8):27-34. 被引量:5

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