摘要
The resistive random access memory（RRAM） device has been widely studied due to its excellent memory characteristics and great application potential in different fields. In this paper, resistive switching materials,switching mechanism, and memory characteristics of RRAM are discussed. Recent research progress of RRAM in high-density storage and nonvolatile logic application are addressed. Technological trends are also discussed.
The resistive random access memory（RRAM） device has been widely studied due to its excellent memory characteristics and great application potential in different fields. In this paper, resistive switching materials,switching mechanism, and memory characteristics of RRAM are discussed. Recent research progress of RRAM in high-density storage and nonvolatile logic application are addressed. Technological trends are also discussed.
基金
supported in part by the National Natural Science Foundation of China(Nos.61421005,61376084)
the National Science and Technology Major Project of China(No.2011ZX02708)
