摘要
We proposed a novel Al Ga N/Ga N enhancement-mode（E-mode） high electron mobility transistor（HEMT） with a dual-gate structure and carried out the detailed numerical simulation of device operation using Silvaco Atlas. The dual-gate device is based on a cascode connection of an E-mode and a D-mode gate. The simulation results show that electric field under the gate is decreased by more than 70% compared to that of the conventional E-mode MIS-HEMTs（from 2.83 MV/cm decreased to 0.83 MV/cm）. Thus, with the discussion of ionized trap density, the proposed dual-gate structure can highly improve electric field-related reliability, such as, threshold voltage stability. In addition, compared with HEMT with field plate structure, the proposed structure exhibits a simplified fabrication process and a more effective suppression of high electric field.
We proposed a novel Al Ga N/Ga N enhancement-mode（E-mode） high electron mobility transistor（HEMT） with a dual-gate structure and carried out the detailed numerical simulation of device operation using Silvaco Atlas. The dual-gate device is based on a cascode connection of an E-mode and a D-mode gate. The simulation results show that electric field under the gate is decreased by more than 70% compared to that of the conventional E-mode MIS-HEMTs（from 2.83 MV/cm decreased to 0.83 MV/cm）. Thus, with the discussion of ionized trap density, the proposed dual-gate structure can highly improve electric field-related reliability, such as, threshold voltage stability. In addition, compared with HEMT with field plate structure, the proposed structure exhibits a simplified fabrication process and a more effective suppression of high electric field.
基金
supported by the Key Technologies Support Program of Jiangsu Province(No.BE2013002-2)
the National Key Scientific Instrument and Equipment Development Projects of China(No.2013YQ470767)
