基于ANSYS层状磁电耦合器件谐响应分析

Harmonic Response Analysis of Layered Magnetoelectric Device Based on ANSYS

利用有限元软件ANSYS12.0对unimorph和L-T两种常见的2-2型结构磁电复合材料进行了模拟仿真,并制作了相应器件验证。实验结果表明,谐振频率的仿真结果与实际测试数据误差在6%以内,L-T与unimorph最大磁电耦合系数比值的仿真结果与理论计算和测试结果误差为分别为5.5%和11.27%。

In this paper, ANSYS 12.0 has been used to simulate unimorph and L-T magnetoelec- tric composites, and two types of magnetoelectric devices have been manufactured to verify the simu-lation. Experiment data shows that the deviation of simulation result of resonant frequency and meas-urement data is within 5.68%, and compared with theoretical calculation and measurement, the simu-lating deviation of the ratio of maximum magnetoelectric coefficients of L-T and unimorph are 5.5 % and 11.27%.