MEMS片上绝缘性能测试高阻标准件研制

Development of high resistance standard for the MEMS on-wafer insulation test

针对MEMS圆片测试系统中绝缘性能测试的准确测量问题,利用Ga As半导体材料硼离子注入后的高绝缘特性,研究制作片上高值电阻标准件的方案,研制出一种基于Ga As衬底的由2个金属电极构成的1 GΩ片上高阻标准件。组建能有效溯源至国家最高标准的定标装置,使用与标准件探针压点坐标匹配的探针卡作为测试夹具,考核出年稳定性优于0.1%的在片标准件。经试验表明:该标准件携带方便、性能稳定,对开展MEMS片上绝缘性能测试提供有效的现场校准方案,有效解决其溯源问题。

In order to solve the accurate measurement problem of isolation test about MEMS wafer test system, prepared a plan of manufacturing on -wafer high resistance standard parts and developed a kind of 1G赘 on-wafer high resistance standard parts that were composed of 2 metal poles based on GaAs substrate according to the high insulation properties of GaAs semiconductor materials after boron ions were injected, and also developed a calibrated equipment that can effectively trace back to the highest national standard. By using the probe card matched with pad coordinates of standard parts, assessed the wafer standard parts with annual stability superior to 0.1% . The test indicates that the standard part is portable with stable performance, which provides effective field calibration plan and can effectively solve the source tracing problem.