半导体薄膜及外延层材料摇摆曲线的动态模拟

Dynamic Simulation of Rocking Curve for Semiconductor Film and Epitaxal Material

应用Bede RADS软件对半导体和外延层晶体结构的摇摆曲线进行动态模拟。通过理论上的实验条件对复杂结构的材料(包括不同组成、厚度以及量子阱数等)进行模拟。以GaAllnAs外延层为例,拟合出不同条件下的摇摆曲线,希望对材料的生长有较大的指导意义。

Bede RADS stands for rocking curve analysis of semiconductor and epitaxial crystal structure by dynamical simulation.Realistic experimental conditions of complex materials structure may be simulated,including difierent composition,thickness and superlattce numbers and so on.Taking an example of GaAlin as epitaxial film,rocking curves under the different experimental conditions were simulated.And all these may be greatly instructional.