摘要
发现了钴掺杂氧化锌薄膜可大幅增强紫外光生电压效应.使用脉冲激光沉积系统在石英基底上制备钴掺杂氧化锌薄膜,高分辨率电子显微镜显示该薄膜为多晶.用脉宽20皮秒、波长355纳米的Nd：YAG激光器作为紫外光源照射薄膜表面,并测量了薄膜在紫外波段的光生电压信号响应.发现钴掺杂可以导致氧化锌薄膜的光电压信号响应相对于未掺杂氧化锌薄膜大幅增强,其信号的幅值提高了大约20倍,达到了～0.4V.信号的上升沿时间由～8纳秒缩短到了～4纳秒,并且光生电压信号的幅值随着照射激光能量的增加而线性增长.预示了该复合薄膜材料可以用于快速响应的紫外光探测器或者紫外激光能量计.
In this paper, the Co-doped ZnO thin films were fabricated on fused quartz substrates by pulsed laser deposition （PLD） technique. The high resolution TEM image of Co-doped ZnO film reveals that it is a polycrystalline film. As we can see from the optical absorption, the absorption edge locates at the wavelength of about 400nm. The photovoltaic responses of Co-doped ZnO thin film were investigated by using a Nd：YAG laser as the ultraviolet source. The photovoltage of doped ZnO is of ～20 times larger than that of undoped ZnO thin films which is ～0.4 V. The rising time of photovoltaic signal from the doped ZnO film is ～4 nanoseconds. These results showed that the Co-doped ZnO thin film can be used as a fast ultraviolet photodetector or an ultraviolet laser energy meter.
作者
赵嵩卿
杨睿
刘义
杨立敏
王晶晶
宁延银
Zhao Songqing Yang Rui Liu Yi Yang Limin Wang Jingjing Ning Tingyin(College of Science, China University of Petroleum （Beijing）, Beijing, 102249, China Faculty of Art and Science, China University of Petroleurn-Beijing at Karamay, Karamay, 834000, China Beijing Key Laboratory of Optical Detection Technology for Oil and Gas, China University of Petroleum, Beijing 102249, China School of Physics and Electronics, Shandong Normal University, Jinan, 250014, China)
出处
《现代科学仪器》
2017年第3期7-10,共4页
Modern Scientific Instruments
基金
国家自然科学基金（批准号：11404195,60877038）,中国石油大学（北京）克拉玛依校区启动基金（批准号：RCYJ2016B-3-004）资助项目助.
关键词
氧化锌薄膜
钴掺杂
紫外光生电压效应
紫外激光能量计
ZnO thin films
Co-doped
Enhanced ultraviolet photovoltaic effect
Ultraviolet laser meter
