以ITO/TiO_2为基质采用不同条件电沉积CdSe异质结电极的光电性能研究

Electrodeposition of CdSe heterojunctions on ITO/TiO_2 surface and the photoelectricper formance of their composite thin film

采用恒电位沉积法,以ITO/TiO_2为基质制备CdSe纳米粒子。EDX和SEM测试分析表明,Cd和Se粒子原子比已接近1∶1沉积在TiO_2表面及内部形成异质结,粒径分布比较均匀。通过调节电沉积的电位和沉积反应时间,可以控制CdSe的粒径。紫外-可见吸收光谱数据表明,不同沉积条件下制备的CdSe粒子展现出不同的光电性能。

ITO/TiO2/CdSe composite films were triumphantly manufactured by electrodeposition of CdSe nanoparticles on ITO/TiO2 surface. The EDX and SEM results manifest that the ratio of Cd and Se is 1 ：1. Particle size distribution more uniform. The growth of CdSe nanopartieles can be availablyeontrolled by regulating the electrodeposition potential and time. The UV-Vis spectra manifest that the different electrodeposition conditions have evident effects on the photovoltaic performance of the achieved CdSe thin films.