Ka波段低旁瓣四单元切比雪夫有源子阵的设计

Design of Ka-band low sidelobe four cell Chebyshev active subarray

为了降低旁瓣,提高子阵增益,设计了一种Ka波段低旁瓣四单元切比雪夫有源子阵。利用电磁场仿真软件对无源子阵和有源放大电路进行仿真与优化。实物测试结果表明,有源子阵在28~29.5GHz频段内S11<-10dB,增益为16.3dB,H面旁瓣电平为-13.4dB,相比于无源子阵,有源子阵相对带宽提高了2.4%,增益增加了6.3dB。

In order to reduce the sidelobes and improve the gain of subarrays, a Ka-band low sidelobe four-unit Chebyshev ac- tive subarray is designed. Simulation and optimization of passive subarray and active amplifier circuit are carried out by using electromagnetic field simulation software. The physical test results show that the active subarray S11〈-10 dB in the band 28-29.5 GHz, the gain is 16.3 dB and the sidelobe level of H side is -13.4 dB. Compared with the passive subarray, the relative bandwidth of active subarray is improved by 2.4% and the gain increased by 6.3 dB.