期刊文献+

Size-controlled MoS2 nanodots supported on reduced graphene oxide for hydrogen evolution reaction and sodium-ion batteries 被引量:6

Size-controlled MoS2 nanodots supported on reduced graphene oxide for hydrogen evolution reaction and sodium-ion batteries
原文传递
导出
摘要 Transition metal dichalcogenide nanodots (NDs) have received considerable interest. We report a facile bottom-up synthetic route for MoS2 NDs by using molybdenum pentachloride and L-cysteine as precursors in oleylamine. The synthesis of NDs with a narrow size distribution ranging from 2.2 to 5.3 nm, was tailored by controlling the reaction time. Because of its coating characteristics, oleyalmine leads to uniformity and monodispersity of the NDs. Moreover, the NDs synthesized have large specific surface areas providing active sites. Graphene possesses outstanding conductivity. Combining the advantages of the two materials, the 0D/2D material exhibits superior electrochemical performance because of the 2D permeable channels for ion adsorption, energy storage, and conversion. The as-prepared MoS2/rGO (-2.2 nm) showed a stable capacity of 220 mAh.g-1 after 10,000 cycles at the current density of 20 A.g-1. Furthermore, a reversible capacity -140 mAh·g-1 was obtained at a much higher current density of 40 A.g-L Additionally, this composite exhibited superior catalytic performance evidenced by a small overpotential (222 mV) to afford 10 mA.cm-2, and a small Tafel slope (59.8 mV-decade-1) with good acid-stability. The facile approach may pave the way for the preparation of NDs with these nanostructures for numerous applications. Transition metal dichalcogenide nanodots (NDs) have received considerable interest. We report a facile bottom-up synthetic route for MoS2 NDs by using molybdenum pentachloride and L-cysteine as precursors in oleylamine. The synthesis of NDs with a narrow size distribution ranging from 2.2 to 5.3 nm, was tailored by controlling the reaction time. Because of its coating characteristics, oleyalmine leads to uniformity and monodispersity of the NDs. Moreover, the NDs synthesized have large specific surface areas providing active sites. Graphene possesses outstanding conductivity. Combining the advantages of the two materials, the 0D/2D material exhibits superior electrochemical performance because of the 2D permeable channels for ion adsorption, energy storage, and conversion. The as-prepared MoS2/rGO (-2.2 nm) showed a stable capacity of 220 mAh.g-1 after 10,000 cycles at the current density of 20 A.g-1. Furthermore, a reversible capacity -140 mAh·g-1 was obtained at a much higher current density of 40 A.g-L Additionally, this composite exhibited superior catalytic performance evidenced by a small overpotential (222 mV) to afford 10 mA.cm-2, and a small Tafel slope (59.8 mV-decade-1) with good acid-stability. The facile approach may pave the way for the preparation of NDs with these nanostructures for numerous applications.
出处 《Nano Research》 SCIE EI CAS CSCD 2017年第7期2210-2222,共13页 纳米研究(英文版)
基金 This work was supported by the National Key R&D Program (No. 2016YFB0901502), National NaturalScience Foundation of China (Nos. 51231003, 51271094, and 21231005), Ministry of Education (Nos. B12015 and IRT13R30), and the Fundamental Research Funds for the Central Universities.
关键词 MoS2 nanodots size-controlled monodisperse electrochemical properties MoS2,nanodots,size-controlled,monodisperse,electrochemical properties
  • 相关文献

参考文献4

二级参考文献55

  • 1Ayari, A.; Cobas, E.; Ogundadegbe, O.; Fuhrer, M. S. Realization and electrical characterization of ultrathin crystals of layered transition-metal dichaleogenides. J. Appl. Phys. 2007, 101, 014507.
  • 2Bao, W. Z.; Cai, X. H.; Kim, D.; Sridhara, K.; Fuhrer, M. S. High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects. Appl. Phys. Lett. 2013, 102, 042104.
  • 3Buseema, M.; Barkelid, M.; Zwiller, V.; van der Zant, H. S. J.; Steele, G. A.; Castellanos-Gomez, A. Large and tunable photothermoelectric effect in single-layer MoS2. Nano Lett. 2013, 13, 358-363.
  • 4Castellanos-Gomez, A.; Poot, M.; Steele, G. A.; van der Zant, H. S. J.; Agra't, N.; Rubio-Bollinger, G. Elastic properties of freely suspended MoSz nanosheets. Adv. Mater. 2012, 24, 772-775.
  • 5Cooper, R. C.; Lee, C.; Marianetti, C. A.; Wei, X. D.; Hone, J.; Kysar, J. W. Nonlinear elastic behavior of two-dimensional molybdenum disulfide. Phys. Rev. B 2013, 87, 035423.
  • 6Castellanos-Gomez, A.; van Leeuwen, R.; Buscema, M.; van der Zant, H. S.; Steele, G. A.; Venstra, W. J. Single-layer MoS2 mechanical resonators. Adv. Mater. 2013, 25, 6719- 6723.
  • 7Splendiani, A.; Sun, L.; Zbang, Y. B.; Li, T. S.; Kim, J.; Chim, C. Y.; Galli, G.; Wang, F. Emerging photoluminescence in monolayer MoS2. Nano Lett. 2010, 10, 1271-1275.
  • 8Mak, K. F.; Lee, C.; Hone, J.; Shah, J.; Heinz, T. F. Atomically thin MoS2: A new direct-gap semiconductor. Phys. Rev. Lett. 2010, 105, 136805.
  • 9Yin, Z. Y.; Li, H.; Li, H.; Jiang, L.; Shi, Y. M.; Sun, Y. H.; Lu, G.; Zhang, Q.; Chen, X. D.; Zhang, H. Single-layer MoS2 phototransistors. ACS Nano 2012, 6, 74-80.
  • 10Lee, 14. S.; Min, S. W.; Chang, Y. G.; Park, M. K.; Nam, T.; Kim, H.; Kim, J. H.; Ryu, S.; Ira, S. MoS2 nanosheet phototransistors with thickness-modulated optical energy gap. Nano Lett. 2012, 12, 3695-3700.

共引文献89

同被引文献27

引证文献6

二级引证文献41

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部