蓝宝石晶片粗磨工艺的研究

Coarse grinding parameters on sapphire wafer

采用碳化硼(粒度尺寸61μm)作为磨料配制的研磨液对蓝宝石表面进行粗磨,并研究其工艺。通过单因素实验,选用不同悬浮液、不同研磨压力、不同质量分数碳化硼进行实验。结果表明:当碳化硼磨料质量分数为20%,悬浮液为CM–F系列,研磨液流量250mL/min,研磨盘转速80r/min,研磨时间30min,研磨压力2.8×10~4 Pa时,研磨效果好,材料去除率可达2.47μm/min,表面无肉眼可见划痕,在OLYMPUS–MX50下观察,晶片表面无明显划伤。

Coarse grinding sapphire wafer surface technology is researched by using 61μm boron carbide,Single factor experiment is used to discuss and test the influence of slurry,lapping pressure and boron carbide content.Results show that the best effect appears when mass fraction of boron carbide is 20% with CM–F series slurry,flow rate 250 mL/min,lapping at 80r/min for 30 min,grinding pressure 2.8×10～4 Pa,the material removal rate can reach 2.47μm/min,with no visible scratches on the surface.The surface quality improved obviously using the OLYMPUS–MX50observation.