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Hole-transporting layer-free inverted planar mixed lead-tin perovskite-based solar cells

Hole-transporting layer-free inverted planar mixed lead-tin perovskite-based solar cells
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摘要 Mixed lead-tin (Pb-Sn) perovskites present a promising strategy to extend the light-harvesting range of perovskite-based solar cells (PSCs). The use of electron- transporting layer or hole-transporting layer (HTL) is critical to achieve high device efficiency. This strategy, however, requires tedious layer-by-layer fabrication as well as high-temperature annealing for certain oxides. In this work, we fabricated HTL-free planar FAPb0.5Sn0.5I3 PSCs with the highest efficiency of 7.94%. High short- circuit current density of 23.13 mA/cm2 was attained, indicating effective charge extraction at the ITO/ FAPb0.5Sn0.5I3 interface. This finding provides an alter- native strategy to simplify the manufacture of single- junction or tandem PSCs. Mixed lead-tin (Pb-Sn) perovskites present a promising strategy to extend the light-harvesting range of perovskite-based solar cells (PSCs). The use of electron- transporting layer or hole-transporting layer (HTL) is critical to achieve high device efficiency. This strategy, however, requires tedious layer-by-layer fabrication as well as high-temperature annealing for certain oxides. In this work, we fabricated HTL-free planar FAPb0.5Sn0.5I3 PSCs with the highest efficiency of 7.94%. High short- circuit current density of 23.13 mA/cm2 was attained, indicating effective charge extraction at the ITO/ FAPb0.5Sn0.5I3 interface. This finding provides an alter- native strategy to simplify the manufacture of single- junction or tandem PSCs.
出处 《Frontiers of Optoelectronics》 EI CSCD 2017年第2期103-110,共8页 光电子前沿(英文版)
基金 This work was supported by start-up funding from ShanghaiTech University, The Young 1000 Talents Program, the National Natural Science Foundation of China (Grant Nos. U 1632118, and 21571129), the National Key Research Program (No. 2016YFA0204000), the Shanghai Key Research Program (No. 16JC1402100), and the Shanghai International Cooperation Project (No. 16520720700). The authors are grateful to the test centers of both ShanghaiTech University and CAS Key Laboratory of Low- Carbon Conversion Science and Engineering, Shanghai Advanced Research Institute, Chinese Academy of Sciences.
关键词 solar cell PEROVSKITE hole-transporting layer(HTL) interface engineering solar cell, perovskite, hole-transporting layer(HTL), interface engineering
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