单粒子仿真方法研究

Study on Single Event Effect Simulation

在宇航级器件的设计过程中,主要考虑单粒子效应和总剂量效应。随着工艺尺寸的不断缩小,总剂量效应变得越来越不明显,而单粒子效应变得越来越显著。对于CMOS电路,单粒子效应主要包括单粒子锁定和单粒子翻转,防止单粒子锁定的方法非常成熟,单粒子翻转效应的研究是现今抗辐照研究的主流。评估单粒子效应的方法主要是实验方式,实验评估单粒子效应虽然准确,但是机时少,费用高,实验周期长,给项目研制过程造成很大障碍,因此非常有必要开展单粒子仿真技术研究。提出一种以Hspice电路网表为基础的单粒子效应评估方法,此方法采用脉冲电流模拟单粒子产生的效果,通过此方法可以有效模拟单粒子现象,并找到电路的设计敏感点,有效指导设计。

In the design process of aerospace-grade devices, the main consideration is SEE and TID.As the process dimension is decreased continuously, total dose effect is getting more unobvious, but single event effect becomes more serious. For CMOS circuit, single event effect （SEE） includes Single Event Latchup（SEL） and Single Event Upset（SEU）. The method of avoiding SEL is mature, so SEU is the key point in anti-radiation study. Now, the experiments are mainly used for SEU evaluation, which are accurate but have less machine time and more cost, so it is necessary to carry out single event effect simulation technology. The evaluation method for single event effect, based on Hspicenetlist, employing the effect generated by pulse current simulating SEE, is proposed in this paper, which is effective and can guide design.