摘要
First-principles calculations were performed to explore the spin-resolved electronic and thermoelectric transport properties of a series of graphene-nanoribbon-based nanojunctions. By flipping the mag- netic moments in graphene leads from parallel to antiparallei, very large tunneling magnetoresistance can be obtained under different gate voltages for all the structures. Spin-resolved alternating-current conductance increases versus frequency for the short nanojunctions but decreases for the long nano- junctions. With increasing junction length, the behavior of the junctions changes from capacitive-like to inductive-like. Because of the opposite signs of spin-up thermopower and spin-down thermopower near the Fermi level, pure spin currents can be obtained and large figures of merit can be achieved by adjusting the gate voltage and chemical potential for all the nanojunctions.
First-principles calculations were performed to explore the spin-resolved electronic and thermoelectric transport properties of a series of graphene-nanoribbon-based nanojunctions. By flipping the mag- netic moments in graphene leads from parallel to antiparallei, very large tunneling magnetoresistance can be obtained under different gate voltages for all the structures. Spin-resolved alternating-current conductance increases versus frequency for the short nanojunctions but decreases for the long nano- junctions. With increasing junction length, the behavior of the junctions changes from capacitive-like to inductive-like. Because of the opposite signs of spin-up thermopower and spin-down thermopower near the Fermi level, pure spin currents can be obtained and large figures of merit can be achieved by adjusting the gate voltage and chemical potential for all the nanojunctions.
基金
This work was financially supported by grant from the National Natural Science Foundation of China （Grant Nos. 11304205 and 11404273） and Shenzhen Natural Science Foundation （No. JCYJ20130326111836781）.
