摘要
Weak-localization （WL） measurements were performed in a Bi cluster-decorated graphene sheet. The charge concentration was kept constant, and the amplitude of the conductance correction was sup- pressed after the Bi-cluster deposition. Detailed WL data were obtained while the gate and temperature were changed. Using E. McCamfs ibrmula, the spin-relaxation time was extracted, which was found to increase with the elastic scattering time. This is attributed to the Elliott-Yafet spin relaxation and Kane-Mele type spin--orbit coupling （SOC）. The SOC strength was enhanced to 2.64 meV as a result of the first deposition. The coverage effect is discussed according to the measurement after tim second deposition.
Weak-localization （WL） measurements were performed in a Bi cluster-decorated graphene sheet. The charge concentration was kept constant, and the amplitude of the conductance correction was sup- pressed after the Bi-cluster deposition. Detailed WL data were obtained while the gate and temperature were changed. Using E. McCamfs ibrmula, the spin-relaxation time was extracted, which was found to increase with the elastic scattering time. This is attributed to the Elliott-Yafet spin relaxation and Kane-Mele type spin--orbit coupling （SOC）. The SOC strength was enhanced to 2.64 meV as a result of the first deposition. The coverage effect is discussed according to the measurement after tim second deposition.
