摘要
We report an extensive first-principles investigation of impurity-induced device-to-device variability of spin-polarized quantum tunneling through Fe/MgO/Fe magnetic tunnel junctions （MTJ）. In particular, we calculated the tunnel magnetoresistance ratio （TMR） and the average values and variances of the currents and spin transfer torque （STT） of an interfacially doped Fe/MgO/Fe MTJ. Further, we predicted that N-doped MgO can improve the performance of a doped Fe/MgO/Fe MTJ. Our first- principles calculations of the fluctuations of the on/off currents and STT provide vital information for future predictions of the long-term reliability of production. spintronic devices, which is imperative for high-volume
We report an extensive first-principles investigation of impurity-induced device-to-device variability of spin-polarized quantum tunneling through Fe/MgO/Fe magnetic tunnel junctions （MTJ）. In particular, we calculated the tunnel magnetoresistance ratio （TMR） and the average values and variances of the currents and spin transfer torque （STT） of an interfacially doped Fe/MgO/Fe MTJ. Further, we predicted that N-doped MgO can improve the performance of a doped Fe/MgO/Fe MTJ. Our first- principles calculations of the fluctuations of the on/off currents and STT provide vital information for future predictions of the long-term reliability of production. spintronic devices, which is imperative for high-volume
