摘要
ＲＡＤＩＡＴＩＯＮＥＦＦＥＣＴＯＮＦＬＵＯＲＩＮＡＴＥＤＳｉＯ＿２ＦＩＬＭＳ￥ＺｈａｎｇＧｕｏｑｉａｎｇ（张国强）；ＹａｎＲｏｎｇｌｉａｎｇ（严荣良）；ＹｕＸｕｅｆｅｎｇ（余学锋）；ＧａｏＷｅｎｙｕ（高文钰）；ＲｅｎＤｉｙｕａｎ（任迪远）（Ｘｉｎｊｉ...
A systematic investigation of γ radiation effects in gate SiO2 as a function of thefluorine ion implantation conditions was performed. It has been found that thegeneration of interface states and oxide trapped charges in fluorinated MOSFETsdepends strongly on implantation conditions. The action of F in oxides is theconjunction of positive and negative effects. A model by forming St--F bonds tosubstitute the other strained bonds which easily become charge traps under irradiationand to relax the bond stress on St / SiOZ interface is use’d for experimental explanation.
