Temperature-induced Lifshitz transition in topological insulator candidate HfTe_5

The ongoing discoveries and studies of novel topological quantum materials have become an emergent and important field of condensed matter physics.Recently,HfTe_5 ignited renewed interest as a candidate of a novel topological material.The single-layer HfTe_5 is predicted to be a two-dimensional large band gap topological insulator and can be stacked into a bulk that may host a temperature-driven topological phase transition.Historically,HfTe_5 attracted considerable interest for its anomalous transport properties characterized by a peculiar resistivity peak accompanied by a sign reversal carrier type.The origin of the transport anomaly remains under a hot debate.Here we report the first high-resolution laser-based angle-resolved photoemission measurements on the temperature-dependent electronic structure in HfTe_5.Our results indicated that a temperature-induced Lifshitz transition occurs in HfTe_5,which provides a natural understanding on the origin of the transport anomaly in HfTe_5.In addition,our observations suggest that HfTe_5 is a weak topological insulator that is located at the phase boundary between weak and strong topological insulators at very low temperature.

The ongoing discoveries and studies of novel topological quantum materials have become an emergent and important field of condensed matter physics. Recently, Hfres ignited renewed interest as a candidate of a novel topological material. The single-layer Hffes is predicted to be a tWOldimensional large band gap topological insulator and can be stacked into a bulk that may host a temperatureldriven topological phase transition. Historically, Hfres attracted considerable interest for its anomalous transport properties characterized by a peculiar resistivity peak accompanied by a sign reversal carrier type. The origin of the transport anomaly remains under a hot debate. Here we report the first high-resolution laserlbased anglelresolved photoemission measurements on the temperature-dependent electronic structure in Hffes. Our results indicated that a temperature-induced Lifshitz transition occurs in Hffes, which provides a natural understanding on the origin of the transport anomaly in Hffe~. In addition, our observa- tions suggest that Hffes is a weak topological insulator that is located at the phase boundary between weak and strong topological insulators at very low temperature.