(Ni,Fe)S1＋x薄膜材料的制备及电性能研究

Preparation and Electrical Properties of (Ni,Fe)S_(1+x) Thin Film

以硫酸亚铁铵((NH_4)_2Fe(SO_4)2·6H_2O)、硫酸镍(NiSO_4·6H_2O)和硫代乙酰胺(C_2H_5NS)为原料,采用化学水浴沉积法制备出(Ni,Fe)S_(1+x)的薄膜。利用XRD、FE-SEM、EDS和半导体测试仪等手段对所得产物进行表征分析。结果表明,当Ni^(2+)的加入量为20%、32%、50%、70%时可以沉积成膜,当加入量为85%和100%时不能沉积成膜;随着Ni^(2+)元素的增加,薄膜(Ni,Fe)S_(1+x)阻值在不断降低,相应阻值由4.65×10~3Ω减小到24.17Ω,表明其导电性能不断增加。

The thin films of （Ni, Fe）S1＋x were prepared by chemical bath deposition method using （NH4 ）2Fe（ SO4 ）2 · 6H20, NiSO4· 6H2O and C2HsNS as raw materials. The products were characterized by XRD, FE-SEM, EDS and semiconductor tester. The results showed that when Ni2＋ was added to 20%, 32%, 50% and 70%, the film could be formed. However, the thin film could not be prepared when the amount of Ni2＋ was 85% and 100% （Ni,Fe）S1＋x. As the Ni2＋ amount was increasing, the resistance was decreasing, therefore, its electrical conductivity was increasing. The resistance value was reduced from 4. 65×10……3 Ω to 28.5 Ω.