摘要
介绍了采用新工艺生长的铟砷锑厚膜单晶。我公司采用和室温锑化铟探测器相同的工艺结构将其制成了高灵敏、非致冷型光导探测器,并对它的光电性能和光谱响应率进行了测试。将该探测器与室温锑化铟、致冷锑化铟以及硒化铅探测器作了对比,所得数据为工作在中远红外波段(5~12μm)范围内的铟砷锑探测器的更广泛应用提供了可靠的依据。
An Indium Arsenic Antimony （InAsSb） thick film single crystal grown by new technology was presented. With this material, a highly sensitive uncooled photoconductive detector was made by using the same process as that of room temperature InSb detectors. The photoelectric properties and spectral responsivity of the detector were measured and compared with those of the room temperature InSb detector, the cooled InSb detector and the PbSe detector. The obtained data provided a reliable basis for the wider application of InAsSb detectors operating in the mid and long infrared waveband （5-12μm）.
出处
《红外》
CAS
2017年第7期48-52,共5页
Infrared
关键词
铟砷锑厚膜单晶
光电性能
光谱响应率
发展前景
indium arsenic antimony
thick film single crystal
photoelectric property
spectral responsivity
development prospect
