静止无功补偿器最小谐波注入的优化

Improvement for Static Var Compensator Considering Minimum Harmonic Injection

基于不带有滤波器的静止无功补偿器,通过优化导通技术使其达到谐波消除和谐波最小化的目的。绝缘栅双极型晶体管控制器(IGBTCR)应用在SVC模型中。优化IGBTCR导通可以减少谐波注入,使电感电压的总谐波失真(THD)减少。最优化的导通角度采用万有引力搜索算法(GSA),在不同的调制指数下计算得出。这些优化导通角以分段混合模式方程组的形式存储在内存储存器中。文章通过仿真实验和模拟实验证明了:提出的方案比传统的方案在电源电压THD有了更大的提高,提高了功率因数和电压质量。

A harmonic elimination and minimisation-based improved switching technique is proposed for static VAr compensator （SVC） without external filter. The insulated gate bipolar transistor controlled reactor（IGBTCR） is used for the proposed SVC model. The switching function of IGBTCR is optimized for minimum reactor voltage total har- monic distortion which leads to less harmonic injection. The best possible optimised switching angles are computed u- sing gravitational search algorithm with varying modulation indices to obtain minimum reactor voltage THD. Piecewise mixed model approximation technique is used to store these switching angles as a function of modulation index in the processor memory. The proposed switching significantly improves source current THD compared to conventional switc- hing. Proper simulations as well as experimental results are presented to confirm the proposed scheme.