摘要
The DC and RF performance of 30 nm gate length enhancement mode （E-mode） InAlN/AIN/GaN high electron mobility transistor （HEMT） on SiC substrate with heavily doped source and drain region have been inves- tigated using the Synopsys TCAD tool. The proposed device has the features of a recessed T-gate structure, lnGaN back barrier and Al2O3 passivated device surface. The proposed HEMT exhibits a maximum drain current density of 2.1 A/mm, transconductance gm of 1050 mS/mm, current gain cut-off frequency f of 350 GHz and power gain cut-off frequency fmax of 340 GHz. At room temperature the measured carrier mobility （μ）, sheet charge carrier density （ns） and breakdown voltage are 1580 cm2/（V.s）, 1.9× 1013 cm-2, and 10.7 V respectively. The superla- tives of the proposed HEMTs are bewitching competitor or future sub-millimeter wave high power RF VLSI circuit applications.
The DC and RF performance of 30 nm gate length enhancement mode （E-mode） InAlN/AIN/GaN high electron mobility transistor （HEMT） on SiC substrate with heavily doped source and drain region have been inves- tigated using the Synopsys TCAD tool. The proposed device has the features of a recessed T-gate structure, lnGaN back barrier and Al2O3 passivated device surface. The proposed HEMT exhibits a maximum drain current density of 2.1 A/mm, transconductance gm of 1050 mS/mm, current gain cut-off frequency f of 350 GHz and power gain cut-off frequency fmax of 340 GHz. At room temperature the measured carrier mobility （μ）, sheet charge carrier density （ns） and breakdown voltage are 1580 cm2/（V.s）, 1.9× 1013 cm-2, and 10.7 V respectively. The superla- tives of the proposed HEMTs are bewitching competitor or future sub-millimeter wave high power RF VLSI circuit applications.
