自发形核生长的AlN单晶湿法腐蚀研究

Research on Wet-etching of AlN Single Crystals Grown by Spontaneous Nucleation

采用湿法腐蚀工艺,使用熔融态KOH和NaOH作为腐蚀剂,对一种物理气相传输(PVT)自发形核新工艺在2100~2250℃条件下生长的AlN单晶进行了腐蚀实验。通过实验及扫描电子显微镜(SEM)结果分析,得到了典型的AlN单晶c面、r系列面及m面最佳的腐蚀工艺参数及腐蚀形貌。另外,基于腐蚀形貌分析,发现了采用该自发形核新工艺生长的AlN晶体某些独特习性并计算出Al N单晶腐蚀坑密度(EPD)。

AlN single crystals prepared by a novel spontaneous physical vapor transport（ PVT） growth approach at 2100-2250 ℃ were etched in molten KOH/NaOH eutectic alloy. All samples were investigated by scanning electron microscope（ SEM） after wet-etching, optimal parameters and morphologies for c-plane,r-planes and m-plane of AlN single crystals are obtained. The growth habits and etch pit densities（ EPD） of crystals grown by proposed novel spontaneous approach are also revealed.