Bi_2O_3掺杂0.35PNN-0.60PZT-0.05V_2O_5陶瓷的低温烧结特性研究

Study on Low-temperature Sintering Performance of Bi_2O_3 Doped 0.35PNN-0.60PZT-0.05V_2O_5 Ceramic

采用传统固相反应法制备了Bi_2O_3掺杂的0.35PNN-0.60PZT-0.05V_2O_5压电陶瓷。通过X线衍射、扫描电镜等测试手段对其烧结特性、晶体结构、微观形貌和介电性能进行研究。结果表明,Bi_2O_3掺杂能降低0.35PNN-0.60PZT-0.05V_2O_5陶瓷的烧结温度,影响相结构,改变微观形貌,并优化电学性能。当Bi_2O_3的质量分数为1.0%时,0.35PNN-(0.60-w%)PZT+0.05V_2O_5+w%Bi_2O_3实现900℃烧结,表现出优异的电学性能:压电常数d33=580pC/N,机电耦合系数kp=0.65,介电常数εr=6 100,介电损耗tanδ=0.006 1,品质因数Qm=65。

The Bi2O3 doped 0.35PNN-0.60PZT-0.05V2O5 ceramics were prepared by the conventional solid phase reaction method.The sintering characteristics,crystal structure,microstructure morphology,and dielectric properties were investigated by the X-ray diffraction,scanning electron microscope（SEM）.The results showed that Bi2O3 additives could lower the sintering temperature,affect the phase structure,changed the micro-morphology and optimize the dielectric properties of 0.35PNN-0.60PZT-0.05V2O5 ceramics.The 0.35PNN-（0.60-w%）PZT＋0.05V2O5＋w%Bi2O3ceramics doped with mass fraction of 1.0% Bi2O3 sintered at 900℃ had the optimal dielectric properties with the piezoelectric constant of d33=580pC/N,electromechanical coupling coefficient of kp=0.65,dielectric constant ofεr=6 100,dielectric loss of tanδ=0.006 1,and quality factor of Qm=65.