摘要
A series of Zn_（1-x）Cd_xO thin films have been fabricated on sapphire by pulsed-laser deposition（PLD）, successfully. To investigate the effect of Cd concentration on structural and optical properties of Zn_（1-x）Cd_xO films, x-ray diffraction（XRD）,ultraviolet-visible spectroscopy（UV-vis）, and x-ray photoelectron spectroscopy（XPS） are employed to characterize the films in detail. The XRD pattern indicates that the Zn_（1-x）Cd_xO thin films have high single-orientation of the c axis. The energy bandgap values of ZnCdO thin films decrease from 3.26 eV to 2.98 eV with the increasing Cd concentration（x）according to the（αhν）~2–hν curve. Furthermore, the band offsets of Zn_（1-x）Cd_xO/ZnO heterojunctions are determinated by XPS, indicating that a type-I alignment takes place at the interface and the value of band offset could be tuned by adjusting the Cd concentration.
A series of Zn_（1-x）Cd_xO thin films have been fabricated on sapphire by pulsed-laser deposition（PLD）, successfully. To investigate the effect of Cd concentration on structural and optical properties of Zn_（1-x）Cd_xO films, x-ray diffraction（XRD）,ultraviolet-visible spectroscopy（UV-vis）, and x-ray photoelectron spectroscopy（XPS） are employed to characterize the films in detail. The XRD pattern indicates that the Zn_（1-x）Cd_xO thin films have high single-orientation of the c axis. The energy bandgap values of ZnCdO thin films decrease from 3.26 eV to 2.98 eV with the increasing Cd concentration（x）according to the（αhν）~2–hν curve. Furthermore, the band offsets of Zn_（1-x）Cd_xO/ZnO heterojunctions are determinated by XPS, indicating that a type-I alignment takes place at the interface and the value of band offset could be tuned by adjusting the Cd concentration.
基金
supported by the National Natural Science Foundation of China(Grant No.11404302)
the Laser Fusion Research Center Funds for Young Talents(Grant No.RCFPD1-2017-9)
