摘要
High-density horizontal InAs nanowire transistors are fabricated on the interdigital silicon-on-insulator substrate.Hexagonal InAs nanowires are uniformly grown between face-to-face（111） vertical sidewalls of neighboring Si fingers by metal–organic chemical vapor deposition. The density of InAs nanowires is high up to 32 per group of silicon fingers,namely an average of 4 nanowires per micrometer. The electrical characteristics with a higher on/off current ratio of 2×10~5are obtained at room temperature. The silicon-based horizontal InAs nanowire transistors are very promising for future high-performance circuits.
High-density horizontal InAs nanowire transistors are fabricated on the interdigital silicon-on-insulator substrate.Hexagonal InAs nanowires are uniformly grown between face-to-face（111） vertical sidewalls of neighboring Si fingers by metal–organic chemical vapor deposition. The density of InAs nanowires is high up to 32 per group of silicon fingers,namely an average of 4 nanowires per micrometer. The electrical characteristics with a higher on/off current ratio of 2×10~5are obtained at room temperature. The silicon-based horizontal InAs nanowire transistors are very promising for future high-performance circuits.
基金
supported by the National Key Research and Development Program of China(Grant No.2016YFA02005003)
the National Natural Science Foundation of China(Grant Nos.61376096 and 61327813)
