热电制冷HgCdTe中波红外探测器的研制

Thermoelectric-Cooled HgCdTe MWIR Detectors

利用碲镉汞(HgCdTe)体晶材料,采用HgCdTe材料拼接技术、磨抛技术等成熟的探测器芯片制备工艺以及三级热电制冷技术,设计并研制出了热电制冷型13元HgCdTe中波红外光导探测器。在-50℃时,峰值电压响应率可达2.7×104 V/W,峰值探测率达到2.3×1010 cm·Hz1/2·W-1,响应波段在3.0~4.6mm之间,峰值响应波长为4.2mm。

By using bulk HgCdTe crystal materials, the detector chip preparation process including HgCdTe material splicing and polishing technology, and three-stage thermoelectric refrigeration technology, a thermoelectric-refrigerator-type 13-pixel HgCdTe photoconductive mid-wavelength infrared detector is designed and manufactured. At a temperature of -50℃, the peak voltage response can reach 2.7×10^4 V/W, the peak detection reaches 2.3×10^10 cm·Hz^1/2·W^-1, and the response band is in the range of 3.0-4.6 mm with a peak response wavelength of 4.2mm.