还原炉内炽热多晶硅电阻率的测定与计算

Calculation of Hot Polysilicon Resistivity in CVD Reactor

在实际生长过程中,控制硅棒表面温度在1050℃±20℃的范围内,测定了生长过程中直径在Φ25mm~Φ130mm时所对应的电压U和电流I值。在此基础上,计算了多晶硅的电阻率σ约为0.00905Ω.cm。同时通过数据分析与拟合,对文献中σ-T曲线在≥700℃范围内进行了公式推导,发现当温度升高到杂质饱和电离温度后,σ与1/T成线性关系,并计算了1050℃时的电阻率为0.00973Ω.cm,与实测值相对误差仅6.99%,结果可供还原炉UI曲线设计时参考。

In The process of Si deposition process, the surface temperature of the rods is controlled at the range of 1100 ±20℃, and the voltage and current value are measured corresponding to different diameler between alP25 and （I）130mm.Based on that, the resistivity of polysilicon is obtained about 0.00905Ω.em.At the same time, by means of analysis of the literature and data fitting, σ-T curve was deduced in the range of more than 700℃, it is found that when the temperature rises to saturation ionization of impurities after the temperature, Lnσ V.S. 1/T is exhibited linear relationship.The resistivity at 1050℃ is calculated to be 0.009731Ω.cm, and the relative error is only 6.99% relative to the measured value.The results for reduction furnace UI curve design reference.