摘要
A novel fluoro-apatite-type compound, Ba3TbK（PO4）3F was developed via a high-temperature solid-state reaction route for the first time. X-ray photoelectron spectroscopy（XPS）, scanning electron microscopy（SEM）, and high-resolution TEM（HRTEM） were used to investigate the component element and microstructure of the phosphor was systematically investigated. The luminescence properties of Ba3TbK（PO4）3F：Sm3＋ were investigated systemically. The results revealed that the Ba3TbK（PO4）3F：Sm3＋ phosphor could be efficiently excited in a broad wavelength region ranging from 200 to 400 nm, which matched perfectly with the ultraviolet（UV） light-emitting diode（LED） chips. Based on the energy transfer（ET） between Tb3＋ and Sm3＋, the color hue of Ba3Tb1–nK（PO4）3F：n Sm3＋（n=0–0.03） was modulated from green（0.305, 0.591） to yellow（0.486, 0.437） area by controlling the Sm3＋doping concentration. The critical distance between Tb3＋ and Sm3＋ ions in Ba3TbK（PO4）3F：Sm3＋ was calculated and the corresponding energy quenching mechanism was identified. Fascinatingly, both the Ba3TbK（PO4）3F and Ba3Tb0.995K（PO4）3F： 0.005Sm3＋ phosphors exhibited very high thermal stability from room temperature（25 oC） to 300 oC, which is extremely important for practical application. In addition, the activation energy for thermal quenching of the Ba3Tb0.995K（PO4）3F：0.005Sm3＋ sample was estimated to be as high as 0.312 eV. These findings demonstrated that as-prepared phosphor may serve as a high-performance candidate for the application in w-LEDs.
A novel fluoro-apatite-type compound, Ba3TbK（PO4）3F was developed via a high-temperature solid-state reaction route for the first time. X-ray photoelectron spectroscopy（XPS）, scanning electron microscopy（SEM）, and high-resolution TEM（HRTEM） were used to investigate the component element and microstructure of the phosphor was systematically investigated. The luminescence properties of Ba3TbK（PO4）3F：Sm3＋ were investigated systemically. The results revealed that the Ba3TbK（PO4）3F：Sm3＋ phosphor could be efficiently excited in a broad wavelength region ranging from 200 to 400 nm, which matched perfectly with the ultraviolet（UV） light-emitting diode（LED） chips. Based on the energy transfer（ET） between Tb3＋ and Sm3＋, the color hue of Ba3Tb1–nK（PO4）3F：n Sm3＋（n=0–0.03） was modulated from green（0.305, 0.591） to yellow（0.486, 0.437） area by controlling the Sm3＋doping concentration. The critical distance between Tb3＋ and Sm3＋ ions in Ba3TbK（PO4）3F：Sm3＋ was calculated and the corresponding energy quenching mechanism was identified. Fascinatingly, both the Ba3TbK（PO4）3F and Ba3Tb0.995K（PO4）3F： 0.005Sm3＋ phosphors exhibited very high thermal stability from room temperature（25 oC） to 300 oC, which is extremely important for practical application. In addition, the activation energy for thermal quenching of the Ba3Tb0.995K（PO4）3F：0.005Sm3＋ sample was estimated to be as high as 0.312 eV. These findings demonstrated that as-prepared phosphor may serve as a high-performance candidate for the application in w-LEDs.
基金
supported by the National Natural Science Foundations of China(51672258 and 51572246)
the Fundamental Research Funds for the Central Universities(2652015296)
