摘要
为获得具有超光滑表面的碘化铯(CsI(TI))基片,需对其表面进行抛光加工处理。利用CsI(TI)晶体的水解特性和化学机械抛光理论,提出对CsI(TI)采用水解抛光的加工方法。通过改变抛光加工中的工艺参数,即抛光液配比、转速和压强进行实验,获得水解抛光CsI(TI)晶体的抛光机制及表面粗糙度Ra与材料去除率随加工用量的变化规律。
In order to obtain super smooth surface of the CsI （TI）substrate, it is necessary to polish its surface. With the help of the property of crystal hydrolysis and the theory of chem- ical mechanical polishing, the hydrolysis polishing method of CsI （TI）was put forward. By changing the polishing process parameters including the slurry ratio, the speed of polishing plate, polishing pressure in experiments, the mechanism of the hydrolysis polishing CsI（TI） crystal was obtained. In addition, the changing rule of roughness Ra and material removal rate with different processing parameters was discovered.
作者
殷际东
吕玉山
刘新伟
李伟凡
李雨菲
赵国伟
YIN Jidong LYU Yushan LIU Xinwei LI Weifan LI Yufei ZHAO Guowei(Shenyang Ligong University, Shenyang 110159, China)
出处
《沈阳理工大学学报》
CAS
2017年第3期77-80,92,共5页
Journal of Shenyang Ligong University
关键词
碘化铯
水解抛光
粗糙度
去除率
CsI（TI）
hydrolysis polishing
surface soughness
material removal rate
