^(63)Ni-Si辐射伏特电池镍薄膜源设计与制备

Design and fabrication of a ^(63)Ni thin film source for a ^(63)Ni-Si betavoltaic battery

在辐射伏特电池换能器件表面直接制备^(63)Ni辐射源的方法存在加载量少、活性低、PN结性能退化等问题。该文提出一种利用氧化铟锡(ITO)薄膜作为导电层材料实现在透明封装玻璃表面电镀^(63)Ni源的方法。根据辐射源自吸收效应理论模拟计算了^(63)Ni-Si辐射伏特电池辐射源的最佳厚度。采用磁控溅射工艺在400μm玻璃基底上制备了厚度为180nm的ITO导电薄膜,利用电化学工作站,对ITO薄膜表面进行电镀镍,对镀镍之后的薄膜材料微观形貌、薄膜厚度进行表征,并对基于该辐射源制备方法的^(63)Ni-Si辐射伏特型同位素电池电学输出性能进行理论仿真,仿真结果表明:在厚度为2μm、活度为7.25×108Bq、面积为36mm2辐射源的辐照下,辐射伏特电池理论上能够输出85.4nW输出功率。

Directly preparation of a 63Ni radioisotope source on the surface of a betavoltaic battery has problems such as low loadings, low activation, and functional deterioration of the PN junction. This research demonstrates the use of an indium tin oxide （ITO） membrane as a conductive layer to plate a 63 Ni source on the surface of a transparent glass package. Simulations of the radiation self absorption effect give the optimal thickness of the 63Ni-Si betavoltaic battery. Then, a 180 nm thick ITO conductive membrane is prepared on a 400 μm thick glass substrate via magnetron sputtering, 63 Ni is then electroplated on the ITO membrane surface. The micro-morphology and the Ni-electroplated membrane thickness are characterized. The electrical capabilities of the 6aNi-Si betavoltaic battery fabricated based on this radiation source preparation method are then simulated. The results show that irradiation of a 2 μm thick, 7.25 × 10^8 Bq activity, 36 mm2 radiation source gives aradioisotope battery that can export 85.4 nW output power.