LED 3D封装基板用TPI/AlN纳米导热膜的制备与研究

Preparation and Study on Thermal Conductive TPI/AlN Nano Film for LED 3D Packaging Substrate

通过原位聚合法制备了热塑性聚酰亚胺/氮化铝(TPI/Al N)纳米导热膜。研究了纳米Al N颗粒不同添加量对TPI/Al N纳米导热膜高压击穿(Hi-Pot)、热导率、剥离强度以及介电性能的影响。结果表明:TPI/Al N纳米导热膜的热导率随着纳米Al N填充量的增加而增大,并在质量分数为10%时达到最大值0.41 W/(m·K);而剥离强度随Al N填充量的增加先增大后减小;交收态的导热膜Hi-Pot在质量分数为3%时达到最大值2 k V(AC),继续添加纳米Al N到20%时,Hi-Pot值急剧下降;弯曲后的导热膜Hi-Pot在质量分数为0.5%时达到最大值1.34 k V(AC)。导热膜的介电常数(Dk)在低频范围时显著增大,在高频范围时变化不大,介质损耗(Df)随着频率的升高而显著增大。

A thermal conductive thermoplastic polyimide （TPI）/AIN nano film was prepared by in-situ po- lymerization method. The effects Of nano-AIN content on the high potential breakdown （Hi-Pot）, thermal conductivity, peel strength, and dielectric properties of the TPI/AIN nano films were studied. The results show that the thermal conductivity of TPI/AIN nano film increases with the increase of nano-AIN con- tent, and reaches the maximum value （0.41 W/（m·K）） when the nano-AIN content is 10%. With the in- crease of nano-AIN content, the peel strength increases first and then decreases. The Hi-Pot of the films as received achieves the maximum value （2 kV（AC）） when the nano-AIN content is 3%, while it decreas- es sharply when the nano-AIN content increases to 20%. After bending, the Hi-Pot of the films reaches the maximum value （1.34 kV（AC）） when the nano-AIN content is 0.5%. The dielectric constant （Dk） in- creases significantly at low frequency and changes little at high frequency, while the dielectric loss （Df） increases obviously with the increase of frequency.