新型高k栅介质材料研究进展

Progress of studies on novel high k materials as gate dielectrics

随着半导体技术的不断发展 ,MOSFET (metal oxide semiconductorfieldeffecttransistor)的特征尺寸不断缩小 ,栅介质等效氧化物厚度已小至nm数量级。这时电子的直接隧穿效应将非常显著 ,将严重影响器件的稳定性和可靠性。因此需要寻找新型高k介质材料 ,能够在保持和增大栅极电容的同时 ,使介质层仍保持足够的物理厚度来限制隧穿效应的影响。本文综述了研究高k栅介质材料的意义 ;MOS栅介质的要求 ;主要新型高k栅介质材料的最新研究动态 ;

With the continuous development of semiconductor technology,feature size of MOSFET devices is scaling down, Especially when the thickness of equivalent oxide of MOSFET is smaller to nanometer magnitude, the electron tunneling is becoming serious enough to endanger the stabilit and reliability of devices, so it is necessary now to seek novel high k dielectrics, whose physical thickness is big enough to suppress the tunneling effect, while at the same time keeping and increasing their capacitance.The significance and necessity of stidying novel high k gate dielectrices, the requirements these high k materials should possess as MOSFET gate dielectrics and the latest developments of these materials were reviewed, and this paper also briefly refers to the mainstream of evolution and points out the following problems should be solved.