Al_2O_3表面弥散铜基导电材料的制备

The fabrication of Al_2O_3 surface dispersion copper matrix conductive material

用渗铝 内氧化技术制备了Al2 O3 表面弥散铜基导电材料 ,研究了渗铝层的铝浓度分布和表面弥散层的显微组织及有关性能。结果表明 ,渗层的铝浓度接近渗剂中铝粉的含量 ,渗层深度可达 10 0 μm ,内氧化后 ,能在渗铝层形成Al2 O3 弥散硬化层 ,Al2 O3 含量也影响了铜的表面硬度。

An aluminizing internal oxidation technique had been used in fabricating Al 2O 3 surface dispersion copper matrix conductive material. The aluminum concentration distribution in aluminized layer, microstructure and some properties of surface dispersion layer were studied. Result shows that the aluminum concentration in surface of aluminized layer approaches aluminum content in the aluminizing agent, the aluminized layer depth reached was 100μm. It is possible to generate Al 2O 3 dispersed hardening layer in the aluminized layer, the amount of Al 2O 3 particles in surface dispersion layer also effects the specific resistance, and wear resistance of the prepared copper matrix conductivity alloys.