(100)锗单晶片的位错腐蚀研究

Study on Dislocation of (100) Single-Crystalline Germanium by Etching

为研究锗单晶的位错,根据湿法腐蚀的腐蚀原理,通过改变氧化剂、腐蚀液成分比例、腐蚀时间、腐蚀温度,分析锗单晶腐蚀抛光过程中各个条件对于腐蚀的影响。结果显示:锗单晶在高锰酸钾氢氟酸硫酸组成的体积比为10∶9∶1的酸性腐蚀剂中,温度为60℃时腐蚀120min就能达到抛光并显示位错的目的。采用湿法腐蚀必须同时存在氧化剂、络合剂才能达到很好的抛光腐蚀效果,在一定温度范围内(30~80℃)升高温度,腐蚀效果先改善后抑制,而腐蚀效果随着氢氟酸的加入量的增加而改善。

In order to research the dislocation of single-crystalline germanium,we researched the effects of various conditions（including the oxidizing agent,concentration of etching solution,time and temperature）in the polishing process of single-crystalline germanium on etching according to the principle of wet etching.It is found that we can polish and show the dislocation of single-crystalline germanium under the following conditions：volume ratio of KMnO4,HF H2SO4 at 10∶9∶1;temperature 60°C and etching time 120 min.In order to achieve a nice polishing effect,the wet etching must be combined with contain oxidant and complexing agent.Within the certain range of temperature（30~80°C）,the etching effect first improves and then is inhibited,while the etching effect improves with the increase of hydrofluoric acid.