摘要
The advancements in the technology development for silicon carbide(SiC) lateral devices are summarized in the past years.By replacing conducting substrates in the conventional devices with semi-insulating ones and by considering the charge compensation in the drift layer based on superjunction principle, blocking voltage can be enhanced by more than two times compared with those values reported in the literature.SiC lateral PiN diodes,JFETs,MOSFETs and IGBTs are realized with blocking voltages as high as 4.2 kV.A COMS inverter is also demonstrated at the sametime with the process of high-voltage lateral IGBTs, showing the potential for future SiC power management integrated circuits(ICs).
The advancements in the technology development for silicon carbide（SiC） lateral devices are summarized in the past years.By replacing conducting substrates in the conventional devices with semi-insulating ones and by consider- ing the charge compensation in the drift layer based on superjunction principle,blocking voltage can be enhanced by more than two times compared with those values reported in the literature.SiC lateral PiN diodes,JFETs, MOSFETs and IGBTs are realized with blocking voltages as high as 4.2 kV.A COMS inverter is also demonstrated at the sametime with the process of high-voltage lateral IGBTs, showing the potential for future SiC power management integrated circuits（ICs）.
出处
《电力电子技术》
CSCD
北大核心
2017年第8期17-19,共3页
Power Electronics
