SiC MOSFET静态温度特性研究

Study of Static State Temperature Characteristics of SiC MOSFET

以实际碳化硅(SiC)金属氧化物半导体场效应晶体管(MOSFET)器件为对象,首先测试了不同温度下的转移和输出特性,获取了温度对其阈值电压、跨导、导通电阻和内栅极电阻的影响规律,接着基于所得到的温度特性实验结果,建立了SiC MOSFET静态等效电路模型,最后对该模型进行了验证。结果表明,温度对SiC MOSFET静态特性及参数的影响较为明显,所建立的等效电路模型能正确反映SiC MOSFET的静态特性。

Taking an actual silicon carbide （SiC） metal-oxide-semiconductor field-effect transistor （MOSFET） device as the research objects,the transfer characteristic and output characteristic under different temperatures are measured firstly.The impacts of temperature on the threshold voltage, trans-conductance, on-state resistance and internal gate re- sistor are obtained.Based on the measurement results, a static equivalent circuit model for SiC MOSFET is established and verified by the comparisons of experimental and simulation results.It is shown that the influences of temperature on static characteristics of SiC MOSFET are quite obvious and the presented model is valid.