100kHz低频功放SiC MOSFET串扰分析与驱动设计

Analysis for Crosstalk of SiC MOSFET in 100 kHz Low Frequency Power Amplifier and the Driver Circuit Design

针对碳化硅(SiC)金属氧化物半导体场效应晶体管(MOSFET)在100 kHz低频(LF)功放应用中出现的串扰问题,考虑SiC MOSFET寄生参数分阶段研究串扰过程,分析关键参数对串扰电压尖峰的影响,从而提出降低串扰尖峰的若干思路。为抑制串扰现象,采用无源抑制方法进行驱动设计,该驱动设计简单可靠,具有较高工程应用价值。最后,进行驱动对比实验,采用所提驱动设计对串扰的抑制效果显著,正、负向串扰电压尖峰比基本驱动电路分别降低73%和70%。

In view of the cmsstalk problem of SiC MOSFET in 100 kHz low frequency power amplifier,considering SiC MOSFET＇s parasitic parameters,the crosstalk produce process is studied.The influence of key parameters on crosstalk voltage spike is studied.Then some ideas to reduce the crosstalk spike are put forward.In order to suppress the crosstalk phenomenon, the passive suppression method is used in driver the design.The driver is simple and reli- able, and has high engineering application value.Finally,the driving experiment shows the crosstalk suppression effect is improved by using the proposed driver design,compared with the basic driver circuit.The positive and negative crosstalk voltage spikes are reduced by 73% and 70%.